1/8 march 2004 STP100NH02L n-channel 24v - 0.0052 ? - 60a to-220 stripfet? iii power mosfet typical r ds (on) = 0.0052 ? @ 10 v typical r ds (on) = 0.007 ? @ 5 v r ds(on) * qg industry?s benchmark conduction losses reduced switching losses reduced low threshold device description the STP100NH02L utilizes the latest advanced design rules of st?s proprietary stripfet? technology. this is suitable fot the most demanding dc-dc converter applications where high efficiency is to be achieved. applications specifically designed and optimised for high efficiency dc/dc converters ordering information type v dss r ds(on) i d STP100NH02L 24 v < 0.006 ? 60 a (2) sales type marking package packaging STP100NH02L p100nh02l to-220 tube 1 2 3 to-220 absolute maximum ratings symbol parameter value unit v spike(1) drain-source voltage rating 30 v v ds drain-source voltage (v gs = 0) 24 v v dgr drain-gate voltage (r gs = 20 k ? ) 24 v v gs gate- source voltage 20 v i d (2) drain current (continuous) at t c = 25c 60 a i d (2) drain current (continuous) at t c = 100c 60 a i dm (3) drain current (pulsed) 240 a p tot total dissipation at t c = 25c 100 w derating factor 0.67 w/c e as (4) single pulse avalanche energy 600 mj t stg storage temperature -55 to 175 c t j max. operating junction temperature internal schematic diagram
STP100NH02L 2/8 thermal data electrical characteristics (t case = 25 c unless otherwise specified) off on (5 ) dynamic rthj-case rthj-amb t l thermal resistance junction-case thermal resistance junction-ambient maximum lead temperature for soldering purpose max max 1.5 62.5 300 c/w c/w c symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 25 ma, v gs = 0 24 v i dss zero gate voltage drain current (v gs = 0) v ds = 20 v v ds = 20 v t c = 125c 1 10 a a i gss gate-body leakage current (v ds = 0) v gs = 20 v 100 na symbol parameter test conditions min. typ. max. unit v gs(th) gate threshold voltage v ds = v gs i d = 250 a 11.8 v r ds(on) static drain-source on resistance v gs = 10 v i d = 30 a v gs = 5 v i d = 15 a 0.0052 0.007 0.006 0.011 ? ? symbol parameter test conditions min. typ. max. unit g fs (5) forward transconductance v ds = 10 v i d =30 a 40 s c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds = 15v f = 1 mhz v gs = 0 2850 800 120 pf pf pf r g gate input resistance f=1 mhz gate dc bias=0 test signal level =20 mv open drain 1 ?
3/8 STP100NH02L switching on switching off source drain diode (1) garanted when external rg=4.7 ? and t f < t fmax . (5) pulsed: pulse duration = 300 s, duty cycle 1.5 %. ( 2 ) value limited by wire bonding (6) q oss = c oss * ? v in , c oss = c gd + c ds . see appendix a (3) pulse width limited by safe operating area. (7) gate charge for synchronous operation ( 4 ) starting t j = 25 o c, i d = 30a, v dd = 15v symbol parameter test conditions min. typ. max. unit t d(on) t r turn-on delay time rise time v dd = 10 v i d =30 a r g =4.7 ? v gs = 10 v (resistive load, figure 3) 13 75 ns ns q g q gs q gd total gate charge gate-source charge gate-drain charge v dd =10 v i d =60 a v gs =10 v 47.5 10 7 64 nc nc nc symbol parameter test conditions min. typ. max. unit t d(off) t f turn-off delay time fall time v dd = 10 v i d = 30 a r g =4.7 ?, v gs = 10 v (resistive load, figure 3) 50 18 24.3 ns ns symbol parameter test conditions min. typ. max. unit i sd i sdm source-drain current source-drain current (pulsed) 60 240 a a v sd (5) forward on voltage i sd = 30 a v gs = 0 1.3 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 60 a di/dt = 100a/s v dd = 16 v t j = 150c (see test circuit, figure 5) 35 35 2 ns nc a electrical characteristics (continued) safe operating area thermal impedance
STP100NH02L 4/8 output characteristics transfer characteristics transconductance static drain-source on resistance gate charge vs gate-source voltage capacitance variations
5/8 STP100NH02L normalized gate threshold voltage vs temperature normalized on resistance vs temperature source-drain diode forward characteristics normalized breakdown voltage vs temperature. . .
STP100NH02L 6/8 fig. 1: unclamped inductive load test circuit fig. 1: unclamped inductive load test circuit fig. 2: unclamped inductive waveform fig. 3: switching times test circuits for resistive load fig. 4: gate charge test circuit fig. 5: test circuit for inductive load switching and diode recovery times
7/8 STP100NH02L dim. mm. inch. min. typ. max. min. typ. typ. a 4.4 4.6 0.173 0.181 c 1.23 1.32 0.048 0.051 d 2.40 2.72 0.094 0.107 e 0.49 0.70 0.019 0.027 f 0.61 0.88 0.024 0.034 f1 1.14 1.70 0.044 0.067 f2 1.14 1.70 0.044 0.067 g 4.95 5.15 0.194 0.203 g1 2.40 2.70 0.094 0.106 h2 10 10.40 0.393 0.409 l2 16.40 0.645 l3 28.90 1.137 l4 13 14 0.511 0.551 l5 2.65 2.95 0.104 0.116 l6 15.25 15.75 0.600 0.620 l7 6.20 6.60 0.244 0.260 l9 3.50 3.93 0.137 0.154 dia 3.75 3.85 0.147 0.151 to-220 mechanical data
STP100NH02L 8/8 i nformation furnished is believed to be accurate and reliable. ho wever, stmicroelectronics assumes no responsibility for the con sequence s o f use of such information nor for any infringement of patents or other rights of third parties which may result from its use. n o license is grante d b y implication or otherwise under any patent or patent rights of stmicroelectronics. specifications mentioned in this publicatio n are subje ct t o change without notice. this publication supersedes and replaces all information previously supplied. stmicroelectronics produ cts are n ot a uthorized for use as critical components in life support devices or systems without express written approval of stmicroelectron ics. the st logo is registered trademark of stmicroelectronics all other names are the property of their respective owners. ? 2004 stmicroelectronics - all rights reserved stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - ital y - japan - malaysia - malta - morocco -singapore - spain - sweden - switzerland - united kingdom - united states. www.st.com
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